Supraleitung und elektronische Korrelationen im Nanometerbereich untersucht
Superconductivity and Electronic correlations studied at the nanoscale
Supraconductivité et corrélations électroniques étudiées à l'échelle nanométrique
Résumé
In this habilitation thesis I summarize about 9-10 years of research that I either personally carried out or directed, or to which I actively took part through joint projects with direct colleagues. My topics of research deal with the electronic properties of quantum materials and their nanostructures. This includes mostly superconducting and correlated systems. Through this period of time, I was also interested in several aspects of mesoscopic physics.
Using scanning tunneling microscopy (STM) and spectroscopy (STS), we access both the topography of the surface of the material under study and its local electronic energy-resolved properties, at the atomic scale. We thus obtain a real mapping of the local electronic density-of-states (LDOS) of a material for energies close to the Fermi energy, and we observe its evolution as a function of composition, nanostructuring, temperature, or applied magnetic field. In some cases we can also carry out electronic transport measurements in-situ. State-of-the-art experiments are carried out under increasingly extreme conditions combining: ultrahigh vacuum (UHV, 10-11 mbar), very low temperature (down to 300 mK) and strong magnetic field (up to 10 Tesla). These stringent conditions are actually mandatory to study quantum physics using surface sensitive tools, since the LDOS of metallic/superconducting materials is highly dependent of the amount and nature of the impurities present in the material. Our samples are grown in-situ under UHV in a preparation chamber coupled to the microscope, or cleaved in this same chamber for bulk materials. A very strong point of our team is to develop and build our own experimental devices. This allows us to explore the quantum world in experimental conditions that are only beginning to be accessible to commercial devices.
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